2N3799 datasheet

2N3799 datasheet
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2N3799 datasheet
2N3799 pinout
2N3799 transistor
2N3799 circuit
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
2.54 (0.100) Nom.
TO–18 METAL PACKAGE
Underside View
PNP, LOW NOISE AMPLIFIER TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
APPLICATIONS:
• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose
PIN 1 – Emitter
PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IB = 0)
IC Collector Current
PD Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD Total Device Dissipation @ TC = 25°C Derate above 25°C
TJ , TSTG Operating and Storage Junction Temperature Range
RqJA Thermal Resistance Junction to Ambient
RqJC Thermal Resistance Junction to Case
2.06mW / °C
6.86mW / °C
–65 to +200°C
0.49°C/mW
0.15°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
CE(sat)
BE(sat)
* Pulse Test: tp ﾣ 300ms, d ﾣ 2%.
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) ft is defined as the frequency at which |hfe| extrapolates to untity.